preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. february 2008 rev 1 1/9 9 STW43NM60ND n-channel 600 v - 0.075 ? - 35 a - to-247 fdmesh? power mosfet (with fast diode) features the worldwide best r ds(on) *area amongst the fast recovery diode devices 100% avalanche tested low input capacitance and gate charge low gate input resistance extremely high dv/dt and avalanche capabilities. application switching applications description the fdmesh? ii series belongs to the second generation of mdmesh? technology. this revolutionary power mosfet associates a new vertical structure to the company's strip layout and associates all advantages of reduced on- resistance and fast switching with an intrinsic fast- recovery body diode.it is therefore strongly recommended for bridge topologies, in particular zvs phase-shift converters. figure 1. internal schematic diagram type v dss @ t jmax r ds(on) max i d STW43NM60ND 650 v < 0.095 ? 35 a to-247 1 2 3 table 1. device summary order code marking package packaging STW43NM60NDd 43nm60nd to-247 tube www.st.com
electrical ratings STW43NM60ND 2/9 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 35 a i d drain current (continuous) at t c = 100 c 22.05 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 140 a p tot total dissipation at t c = 25 c 255 w dv/dt (2) 2. i sd 35 a, di/dt 600 a/s, v dd = 80% v (br)dss peak diode recovery voltage slope 40 v/ns t stg storage temperature ?55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit rthj-case thermal resistance junction-case max 0.49 c/w rthj-amb thermal resistance junction-ambient max 50 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by tj max) tbd a e as single pulse avalanche energy (starting t j =25 c, i d =i as , v dd =50 v) tbd mj
STW43NM60ND electrical characteristics 3/9 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, @125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 17.5 a 0.075 0.095 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5 % forward transconductance v ds =15 v , i d = 17.5 a tbd s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 4102 223 20 pf pf pf c oss eq. (2) 2. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v ds equivalent output capacitance v gs = 0, v ds = 0 to 480 v tbd pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 35 a, v gs = 10 v, (see figure 3) 137 tbd tbd nc nc nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level = 20 mv open drain 1.4 ? table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 300 v, i d = 35 a r g =4.7 ? v gs = 10 v (see figure 2) tbd tbd tbd tbd ns ns ns ns
electrical characteristics STW43NM60ND 4/9 table 8. source drain diode symbol parameter test co nditions min typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 35 140 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5 % forward on voltage i sd = 35 a, v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 35 a, di/dt = 100 a/s v dd = 100 v (see figure 4) tbd tbd tbd ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 35 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 4) tbd tbd tbd ns c a
STW43NM60ND test circuit 5/9 3 test circuit figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive wavefo rm figure 7. switching time waveform
package mechanical data STW43NM60ND 6/9 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
STW43NM60ND package mechanical data 7/9 dim. mm. min. typ max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
revision history STW43NM60ND 8/9 5 revision history table 9. document revision history date revision changes 06-feb-2008 1 first release
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